Patent Portfolio
We maintain and support an active program to protect our intellectual property, primarily through the filing of patent applications and the defense of issued patents against infringement. Our patents and patent applications cover important inventions in memory cell architecture, cross-point arrays, logic chip and host interfaces and applications of resistive random access memory, including CMOx™. We have a program to file applications and obtain patents in the United States and in selected foreign countries where we believe filing for such protection is appropriate. In some instances, obtaining appropriate levels of protection may involve prosecuting continuation and counterpart patent applications based on a common parent application.

Click here to see a list of our patents.
|
Title |
Patent # |
Issue Date |
|||
|
Cross Point Memory Array Using Multiple Thin Films |
US |
6,753,561 |
22-Jun-04 |
||
|
Multi-Output Multiplexor |
US |
6,798,685 |
28-Sep-04 |
||
|
Cross Point Memory Array Using Distinct Voltages |
US |
6,831,854 |
14-Dec-04 |
||
|
Cross Point Memory Array Using Multiple Modes Of Operation |
US |
6,834,008 |
21-Dec-04 |
||
|
Line Drivers That Fits Within A Specified Line Pitch |
US |
6,836,421 |
28-Dec-04 |
||
|
Cross Point Memory Array With Memory Plugs Exhibiting A Characteristic Hysteresis |
US |
6,850,429 |
1-Feb-05 |
||
|
Multiplexor Having A Reference Voltage On Unselected Lines |
US |
6,850,455 |
1-Feb-05 |
||
|
Non Volatile Memory With A Single Transistor And Resistive Memory Element |
US |
6,856,536 |
15-Feb-05 |
||
|
Memory Array Of A Non-Volatile RAM |
US |
6,859,382 |
22-Feb-05 |
||
|
Rewritable Memory With Non-Linear Memory Element |
US |
6,870,755 |
22-Mar-05 |
||
|
Re-Writable Memory With Multiple Memory Layers |
US |
6,906,939 |
14-Jun-05 |
||
|
Multiple Modes Of Operation In A Cross Point Array |
US |
6,909,632 |
21-Jun-05 |
||
|
High Density NVRAM |
US |
6,917,539 |
12-Jul-05 |
||
|
An Adaptive Programming Technique For A Re-Writable Conductive Memory Device |
US |
6,940,744 |
6-Sep-05 |
||
|
Multi-Layer Conductive Memory Device |
US |
6,965,137 |
15-Nov-05 |
||
|
Providing A Reference Voltage To A Cross Point Memory Array |
US |
6,970,375 |
29-Nov-05 |
||
|
Memory Element Having Islands |
US |
6,972,985 |
6-Dec-05 |
||
|
Cross Point Memory Array With Memory Plugs Exhibiting A Characteristic Hysteresis |
US |
6,992,922 |
31-Jan-06 |
||
|
Conductive Memory Stack With Non-Uniform Width |
US |
7,009,235 |
7-Mar-06 |
||
|
Line Drivers That Use Minimal Metal Layers |
US |
7,009,909 |
7-Mar-06 |
||
|
Discharge Of Conductive Array Lines In Fast Memory |
US |
7,020,006 |
28-Mar-06 |
||
|
Cross Point Memory Array Using Distinct Voltages |
US |
7,020,012 |
28-Mar-06 |
||
|
A 2-Terminal Trapped Charge Memory Device With Voltage Switchable Multi-Level Resistance |
US |
7,038,935 |
2-May-06 |
||
|
Memory Array With High Temperature Wiring |
US |
7,042,035 |
9-May-06 |
||
|
An Adaptive Programming Technique For A Re-Writable Conductive Memory Device |
US |
7,054,183 |
30-May-06 |
||
|
Cross Point Memory Array With Fast Access Time |
US |
7,057,914 |
6-Jun-06 |
||
|
Low Temperature Deposition Of Complex Metal Oxide (CMO) Memory Materials For Non-Volatile Memory Integrated Circuits |
US |
7,063,984 |
20-Jun-06 |
||
|
Conductive Memory Device With Conductive Oxide Electrodes |
US |
7,067,862 |
27-Jun-06 |
||
|
Multi-Resistive State Material That Uses Dopants |
US |
7,071,008 |
4-Jul-06 |
||
|
Two Terminal Memory Array Having Reference Cells |
US |
7,075,817 |
11-Jul-06 |
||
|
Layout Of Driver Sets In Cross Point Memory Array |
US |
7,079,442 |
18-Jul-06 |
||
|
Multi-Resistive State Element With Reactive Metal |
US |
7,082,052 |
25-Jul-06 |
||
|
Re-Writable Memory With Multiple Memory Layers |
US |
7,095,643 |
22-Aug-06 |
||
|
Conductive Memory Array Having Page Mode And Burst Mode Read Capability |
US |
7,095,644 |
22-Aug-06 |
||
|
Conductive Memory Array Having Page Mode And Burst Mode Write Capability |
US |
7,099,179 |
29-Aug-06 |
||
|
Non Volatile Memory With A Single Transistor And Resistive Memory Element |
US |
7,126,841 |
24-Oct-06 |
||
|
Providing A Reference Voltage To A Cross Point Memory Array |
US |
7,149,107 |
12-Dec-06 |
||
|
Memory Array Of A Non-Volatile RAM |
US |
7,149,108 |
12-Dec-06 |
||
|
Line Drivers That Fits Within A Specified Line Pitch |
US |
7,158,397 |
2-Jan-07 |
||
|
High-Density NVRAM |
US |
7,180,772 |
20-Feb-07 |
||
|
Conductive Memory Stack With Sidewall |
US |
7,186,569 |
6-Mar-07 |
||
|
Cross Point Memory Array With Fast Access Time |
US |
7,227,767 |
5-Jun-07 |
||
|
Two Terminal Memory Array Having Reference Cells |
US |
7,227,775 |
5-Jun-07 |
||
|
Laser Annealing Of Complex Metal Oxides (CMO) Memory Materials For Non-Volatile Memory Integrated Circuits |
US |
7,309,616 |
18-Dec-07 |
||
|
Resistive Memory Device With A Treated Interface |
US |
7,326,979 |
5-Feb-08 |
||
|
Storage Controller For Multiple Configurations Of Vertical Memory |
US |
7,327,600 |
5-Feb-08 |
||
|
Providing A Reference Voltage To A Cross Point Memory Array |
US |
7,327,601 |
5-Feb-08 |
||
|
Enhanced Functionality In A Two Terminal Memory Array |
US |
7,330,370 |
12-Feb-08 |
||
|
Two-Cycle Sensing In A Two-Terminal Memory Array Having Leakage Current |
US |
7,372,753 |
13-May-08 |
||
|
Sensing A Signal In A Two-Terminal Memory Array Having Leakage Current |
US |
7,379,364 |
27-May-08 |
||
|
Two Terminal Memory Array Having Reference Cells |
US |
7,382,644 |
3-Jun-08 |
||
|
Two Terminal Memory Array Having Reference Cells |
US |
7,382,645 |
3-Jun-08 |
||
|
Multi-Resistive State Element With Reactive Metal |
US |
7,394,679 |
1-Jul-08 |
||
|
Conductive Memory Device With Conductive Oxide Electrodes |
US |
7,400,006 |
15-Jul-08 |
||
|
Method For Two-Cycle Sensing In A Two-Terminal Memory Array Having Leakage Current |
US |
7,436,723 |
14-Oct-08 |
||
|
Conductive Memory Stack With Non-Uniform Width |
US |
7,439,082 |
21-Oct-08 |
||
|
Two Terminal Memory Array Having Reference Cells |
US |
7,457,147 |
25-Nov-08 |
||
|
Method For Sensing A Signal In A Two-Terminal Memory Array Having Leakage Current |
US |
7,505,347 |
17-Mar-09 |
||
|
Serial Memory Interface |
US |
7,522,468 |
21-Apr-09 |
||
|
Conductive Memory Stack With Sidewall |
US |
7,528,405 |
5-May-09 |
||
|
Memory Using Variable Tunnel Barrier Widths |
US |
7,538,338 |
26-May-09 |
||
|
Scaleable Memory Systems Using Third Dimension Memory |
US |
7,539,811 |
26-May-09 |
||
|
Memory Emulation Using Resistivity-Sensitive Memory |
US |
7,593,284 |
22-Sep-09 |
||
|
Multi-Step Selective Etching For Cross-Point Memory |
US |
7,618,894 |
17-Nov-09 |
||
|
Memory Power Management |
US |
7,619,945 |
17-Nov-09 |
||
|
Planar Third Dimensional Memory With Multi-Port Access |
US |
7,633,789 |
15-Dec-09 |
||
|
Multi-Resistive State Memory Device With Conductive Oxide Electrodes |
US |
7,633,790 |
15-Dec-09 |
||
|
Buffering Systems For Accessing Multiple Layers Of Memory In Integrated Circuits |
US |
7,649,788 |
19-Jan-10 |
||
|
Programmable Logic Device Structure Using Third Dimensional Memory |
US |
7,652,501 |
26-Jan-10 |
||
|
Field Programmable Gate Arrays Using Resistivity Sensitive Memories |
US |
7,652,502 |
26-Jan-10 |
||
|
Low Read Current Architecture For Memory |
US |
7,701,791 |
20-Apr-10 |
||
|
Movable Terminal In A Two Terminal Memory Array |
US |
7,701,834 |
20-Apr-10 |
||
|
Non-Volatile Register Having A Memory Element And Register Logic Vertically Configured On A Substrate |
US |
7,715,244 |
11-May-10 |
||
|
Circuitry And Method For Indicating A Memory |
US |
7,715,250 |
11-May-10 |
||
|
Preservation Circuit And Methods To Maintain Values Representing Data In One Or More Layers Of Memory |
US |
7,719,876 |
18-May-10 |
||
|
Continuous Plane Of Thin-Film Materials For A Two-Terminal Cross-Point Memory |
US |
7,742,323 |
22-Jun-10 |
||
|
Non-Volatile Programmable Memory |
DE FR NL |
1743340 |
23-Jun-10 |
||
|
Performing Data Operations Using Non-Volatile Third Dimension Memory |
US |
7,747,817 |
29-Jun-10 |
||
|
Media Player With Non-Volatile Memory |
US |
7,751,221 |
6-Jul-10 |
||
|
Fast Data Access Through Page Manipulation |
US |
7,765,380 |
27-Jul-10 |
||
|
Integrated Circuits And Methods To Compensate For Defective Memory In Multiple Layers Of Memory |
US |
7,796,451 |
14-Sep-10 |
||
|
Transient Storage Device Emulation Using Resistivity-Sensitive Memory |
US |
7,808,809 |
5-Oct-10 |
||
|
Multiple Type Memory |
US |
7,813,210 |
12-Oct-10 |
||
|
Securing Data In Memory Device |
US |
7,818,523 |
19-Oct-10 |
||
|
Emulation Of A NAND Memory System |
US |
7,822,913 |
26-Oct-10 |
||
|
Contemporaneous Margin Verification And Memory Access For Memory Cells In Cross Point Memory Arrays |
US |
7,830,701 |
9-Nov-10 |
||
|
Method Of Making A Planar Electrode |
US |
7,832,090 |
16-Nov-10 |
||
|
State Machines Using Resistivity-Sensitive Memories |
US |
7,834,660 |
16-Nov-10 |
||
|
Fast Data Access Through Page Manipulation |
US |
7,836,273 |
16-Nov-10 |
||
|
Three-Dimensional Non-Volatile Register With An Oxygen-Ion-Based Memory Element And A Vertically-Stacked Register Logic |
US |
7,839,702 |
23-Nov-10 |
||
|
Four Vertically Stacked Memory Layers In A Non-Volatile Re-Writeable Memory Device |
US |
7,847,330 |
7-Dec-10 |
||
|
Performing Data Operations Using Non-Volatile Third Dimension Memory |
US |
7,870,333 |
11-Jan-11 |
||
|
Memory Emulation Using Resistivity-Sensitive Memory |
US |
7,876,594 |
25-Jan-11 |
||
|
Method And System For Accessing Non-Volatile Memory |
US |
7,877,541 |
25-Jan-11 |
||
|
Selection Device For Re-Writable Memory |
US |
7,884,349 |
8-Feb-11 |
||
|
Continuous Plane Of Thin-Film Materials For A Two-Terminal Cross-Point Memory |
US |
7,888,711 |
15-Feb-11 |
||
|
Multi-Resistive State Memory Device With Conductive Oxide Electrodes |
US |
7,889,539 |
15-Feb-11 |
||
|
Buffering Systems Methods For Accessing Multiple Layers Of Memory In Integrated Circuits |
US |
7,889,571 |
15-Feb-11 |
||
|
ASIC Including Vertically Stacked Embedded Non-Flash Re-Writable Non-Volatile Memory |
US |
7,889,591 |
15-Feb-11 |
||
|
Continuous Plane Of Thin-Film Materials For A Two-Terminal Cross-Point Memory |
US |
7,897,951 |
1-Mar-11 |
||
|
Preservation Circuit And Methods To Maintain Values Representing Data In One Or More Layers Of Memory |
US |
7,898,841 |
1-Mar-11 |
||
|
Field Programmable Gate Arrays Using Resistivity Sensitive Memories |
US |
7,902,868 |
8-Mar-11 |
||
|
Integrated Circuits And Methods To Compensate For Defective Non-Volatile Embedded Memory In One Or More Layers Of Vertically Stacked Non-Volatile Embedded Memory
|
US |
7,903,485 |
8-Mar-11 |
||
|
Securing Non-Volatile Data In An Embedded Memory Device |
US |
7,913,049 |
22-Mar-11 |
||
|
Memory Device With Vertically Embedded Non-Flash Non-Volatile Memory For Emulation Of NAND Flash Memory |
US |
7,917,691 |
29-Mar-11 |
||
|
Integrated Circuits To Control Access To Multiple Layers Of Memory In A Solid State Drive |
US |
7,961,510 |
14-Jun-11 |
||
|
Buffering Systems For Accessing Multiple Layers Of Memory In Integrated Circuits |
US |
7,961,527 |
14-Jun-11 |
||
|
Processor Including Vertically Stacked Third-Dimensional Embedded Re-Writeable Non-Volatile Memory And Registers |
US |
7,961,529 |
14-Jun-11 |
||
|
Method For Contemporaneous Margin Verification And Memory Access For Memory Cells In Cross-Point Memory Arrays |
US |
7,978,501 |
12-Jul-11 |
||
|
Memory Using Variable Tunnel Barrier Widths |
US |
7,985,963 |
26-Jul-11 |
||
|
Read Buffering Systems For Accessing Multiple Layers Of Memory In Integrated Circuits |
US |
7,986,567 |
26-Jul-11 |
||
|
Integrated Circuits To Control Access To Multiple Layers Of Memory |
US |
7,990,762 |
2-Aug-11 |
||
|
Threshold Device For A Memory Array |
US |
7,995,371 |
9-Aug-11 |
||
|
Memory Emulation In An Electronic Organizer |
US |
7,996,600 |
9-Aug-11 |
||
|
State Machines Using Non-Volatile Re-Writeable Two-Terminal Resistivity-Sensitive Memories |
US |
7,999,571 |
16-Aug-11 |
||
|
Solid State Drive With Non-Volatile Memory For A Media Device |
US |
8,000,121 |
16-Aug-11 |
||
|
Media Player With Non-Volatile Memory |
US |
8,000,122 |
16-Aug-11 |
||
|
Scaleable Memory Systems Using Third Dimension Memory |
US |
8,000,138 |
16-Aug-11 |
||
|
Memory Cell Formation Using Ion Implant Isolated Conductive Metal Oxide |
US |
8,003,511 |
23-Aug-11 |
||
|
Programmable Logic Device Structure Using Third Dimensional Memory |
US |
8,004,309 |
23-Aug-11 |
||
|
Serial Memory Interface |
US |
8,018,790 |
13-Sep-11 |
||
|
Combined Memories In Integrated Circuits |
US |
8,020,132 |
13-Sep-11 |
||
|
Array Operation Using A Schottky Diode As A Non-Ohmic Isolation Device |
US |
8,027,215 |
27-Sep-11 |
||
|
Conductive Metal Oxide Structures In Non-Volatile Re-Writable Memory Devices |
US |
8,031,509 |
4-Oct-11 |
||
|
Low Read Current Architecture For Memory |
US |
9,031,545 |
4-Oct-11 |
||
|
Ion Barrier Cap |
US |
8,031,510 |
4-Oct-11 |
||
|
System For Accessing Non-Volatile Memory |
US |
8,032,692 |
4-Oct-11 |
||
