Memory Markets

Application End-Market
The initial primary end-market for CMOx™ Cross-point Memory is high density data storage. A discussion of semiconductor memory technology always has to start with the customer.

 
Cache Memory
System Memory
Boot Code Storage
Code Storage
High Density Data Storage
Archival Data Storage
Ancient History
SRAM SRAM
DRAM
ROM EPROM
EEPROM
HDD
Tape
Tape
1990s
SRAM DRAM NOR
HDD
NOR HDD Tape
Today
SRAM DRAM NOR
NAND
NAND HDD
NAND
HDD
Tape
Tomorrow
SRAM
DRAM
MRAM/STRAM
DRAM
MRAM/STRAM
NAND
CMOx™
Phase Change
NAND
CMOx™
NAND
CMOx™
HDD

System Solutions Dominate
As the chart below demonstrates, its not necessarily the optimal data sheet that has prevailed in the market. Price dominates the consideration of which semiconductor memory to put into the bill of materials. Therefore profitability is driven by being a low cost provider. In high volume manufacturing, cell size (how many terabytes are on a wafer) is the key metric. In order to compensate for the technology sacrifices required to get to smallest cell size, the market has developed system solutions that deal with reliability, endurance and other tradeoffs.

 
SRAM (100F2)
DRAM (6F2)
Retention
Retention: Infinite
milliseconds
System: Refresh!
     
 
NOR MLC(4.5F2)
NAND MLC (2.25F2)
Bad Bits
None
Many
System: ECC!

System architectures will change to accommodate the shortcomings of a new memory technology…as long as the cell size is smaller.

Value Added Markets
Even within these enormous price sensitive markets, there are applications where value added solutions receive a premium (e.g. graphic DRAM as compared to PC DRAM). The below chart describes the performance value propositions that have traction in non-volatile memories and the levers available to semiconductor manufacturers in addressing the price requirements of commodity markets.

Price Performance
  • Process node (nanometer)
  • SLC or MLC (bits per cell)
  • Number of masking steps
  • Number of memory layers
  • Design macro optimization (die size in square millimeters)
  • Endurance (read/write cycles)
  • Data retention (years at temperature)
  • Read speed (nanoseconds)
  • Write speed (megabytes per second)
  • Block size (bits per physical/logical unit)
  • Power consumed